PART |
Description |
Maker |
K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
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K6T1008V2C K6T1008V2C-B K6T1008V2C-D K6T1008V2C-F |
128K x8 bit Low Power and Low Voltage CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
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EM620FU16 |
128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
EM621FR8ES-45LF EM681FR8ES-45LF EM622FR8ES-45LF EM |
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
EM620FU16B EM624FS16AT-10LL EM644FS16AT-10LL EM624 |
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc Emerging Memory & Logic...
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EM6160FS32CW85L EM6160FV32CW85L EM6161FS32CW85L EM |
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc Emerging Memory & Logic...
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K6F2016U4E K6F2016U4E-F DSK6F2016U4E DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
BS616LV2017 BS616LV2017EIP70 BS616LV2017AC BS616LV |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16 FF-SR2 Series, Two-hand Control, 24 Vdc 非常低功电压CMOS SRAM28K的16 LM49370 Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers Marine Lamp, 4 in x 6 in [101,6 mm x 152,4 mm], Wide Flood Beam Pattern, 12 Vdc/50 W/4 A, Flush mounting Asynchronous 2M(128Kx16) bits Static RAM
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Brilliance Semiconducto... Honeywell International, Inc. BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
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IDT71L024L70PZI IDT71L024 IDT71L024L100PZ IDT71L02 |
low power 3v cmos sram 1 meg (128k X 8-bit) 128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
BS616LV2015 BS616LV2015TI BS616LV2015AC BS616LV201 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit Plug-In Relay; Contacts:SPST-NO; Contact Carry Current:30A; Coil Voltage AC Max:24V; Relay Mounting:Plug-In; Relay Terminals:Screw; Coil Resistance:11.5ohm; Coil Power VAC:9.5VA RoHS Compliant: Yes 非常低功电压CMOS SRAM28K的16 Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor] Brilliance Semiconducto...
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K6F2016R4G-XF85 K6F2016R4G K6F2016R4G-F K6F2016R4G |
2Mb(128K x 16 bit) Low Power SRAM
|
SAMSUNG[Samsung semiconductor]
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LY62W12816ML-70LLSIT LY62W12816GL-70LLSI LY62W1281 |
128K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
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